PMDPB56XNEAX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

30V

Published :

2016

JESD-30 Code :

R-PDSO-N6

Transistor Element Material :

SILICON

Terminal Form :

NO LEAD

DS Breakdown Voltage-Min :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

3.1A Ta

Drain Current-Max (Abs) (ID) :

3.1A

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.072Ohm

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

FET Type :

2 N-Channel (Dual)

Package / Case :

6-UDFN Exposed Pad

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

256pF @ 15V

Reference Standard :

AEC-Q101; IEC-60134

Rds On (Max) @ Id, Vgs :

72m Ω @ 3.1A, 4.5V

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Power - Max :

485mW Ta

Number of Elements :

2

FET Feature :

Standard

Number of Terminations :

6

Vgs(th) (Max) @ Id :

1.25V @ 250μA