PMDPB30XN,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Channels :

2

Continuous Drain Current (ID) :

4A

Turn On Delay Time :

40 ns

Fall Time (Typ) :

16 ns

FET Type :

2 N-Channel (Dual)

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

Drain to Source Resistance :

32mOhm

Rise Time :

15ns

Gate to Source Voltage (Vgs) :

650mV

Operating Temperature :

-55°C~150°C TJ

Rds On Max :

40 mΩ

FET Feature :

Logic Level Gate

Mount :

Surface Mount

Turn-Off Delay Time :

4 ns

Current - Continuous Drain (Id) @ 25°C :

4A

Supplier Device Package :

6-HUSON-EP (2x2)

Vgs(th) (Max) @ Id :

900mV @ 250μA

Number of Pins :

8

Min Operating Temperature :

-55°C

Max Power Dissipation :

490mW

Rds On (Max) @ Id, Vgs :

40mOhm @ 3A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 10V

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Drain to Source Voltage (Vdss) :

20V

Factory Lead Time :

8 Weeks

Package / Case :

6-UDFN Exposed Pad

Published :

2012

Power - Max :

490mW

Input Capacitance :

660pF

Gate Charge (Qg) (Max) @ Vgs :

21.7nC @ 4.5V