PEMD9,315

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Package / Case :

SOT-563, SOT-666

Number of Elements :

2

Polarity :

NPN, PNP

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 5mA 5V

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Base (R1) :

10k Ω

Current - Collector Cutoff (Max) :

1μA

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

50V

Mount :

Surface Mount

Number of Pins :

6

Published :

2011

Collector Emitter Breakdown Voltage :

50V

Factory Lead Time :

4 Weeks

Number of Terminations :

6

Max Power Dissipation :

300mW

Packaging :

Tape and Reel (TR)

Terminal Form :

Flat

Base Part Number :

P*MD9

Resistor - Emitter Base (R2) :

47k Ω

Min Operating Temperature :

-65°C

Element Configuration :

Dual

Terminal Finish :

Tin (Sn)

Pin Count :

6

Max Operating Temperature :

150°C

Radiation Hardening :

No

Max Collector Current :

100mA

JESD-609 Code :

e3