PEMD10,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Power Dissipation :

300mW

Weight :

4.535924g

ECCN Code :

EAR99

hFE Min :

100

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 21

Package / Case :

SOT-563, SOT-666

Polarity :

NPN, PNP

Resistor - Emitter Base (R2) :

47k Ω

Element Configuration :

Dual

Radiation Hardening :

No

Max Power Dissipation :

300mW

Base Part Number :

MD10

Collector Emitter Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Height :

600μm

Packaging :

Tape and Reel (TR)

Length :

1.7mm

Emitter Base Voltage (VEBO) :

10V

Number of Pins :

6

Number of Elements :

2

Number of Terminations :

6

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Termination :

SMD/SMT

Collector Emitter Saturation Voltage :

100mV

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Collector Emitter Voltage (VCEO) :

50V

Published :

2003

Terminal Form :

Flat

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

Max Operating Temperature :

150°C

Transistor Application :

SWITCHING

Max Collector Current :

100mA

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Resistor - Base (R1) :

2.2k Ω

Pin Count :

6

Current - Collector Cutoff (Max) :

1μA

Lead Free :

Lead Free

Min Operating Temperature :

-65°C

Width :

1.3mm