PEMD10,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Factory Lead Time :

4 Weeks

Collector Emitter Breakdown Voltage :

50V

Radiation Hardening :

No

Max Operating Temperature :

150°C

Pin Count :

6

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Resistor - Emitter Base (R2) :

47k Ω

Width :

1.3mm

Polarity :

NPN, PNP

Emitter Base Voltage (VEBO) :

10V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Published :

2003

Collector Emitter Saturation Voltage :

100mV

Termination :

SMD/SMT

Max Collector Current :

100mA

Height :

600μm

Number of Terminations :

6

Min Operating Temperature :

-65°C

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Power Dissipation :

300mW

Number of Elements :

2

Mount :

Surface Mount

Number of Pins :

6

Max Power Dissipation :

300mW

Mounting Type :

Surface Mount

Terminal Form :

Flat

Element Configuration :

Dual

Weight :

4.535924g

Lead Free :

Lead Free

Base Part Number :

MD10

Length :

1.7mm

Package / Case :

SOT-563, SOT-666

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 21

Packaging :

Tape and Reel (TR)

hFE Min :

100

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

REACH SVHC :

No SVHC

Resistor - Base (R1) :

2.2k Ω

Current - Collector Cutoff (Max) :

1μA