PEMD12,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Length :

6.35mm

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Factory Lead Time :

4 Weeks

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Number of Elements :

2

Termination :

SMD/SMT

Polarity :

NPN, PNP

Collector Emitter Voltage (VCEO) :

50V

Package / Case :

SOT-563, SOT-666

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Resistor - Emitter Base (R2) :

47k Ω

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Weight :

4.535924g

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

1μA

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Resistor - Base (R1) :

47k Ω

Published :

2011

Width :

6.35mm

Max Collector Current :

100mA

Pin Count :

6

REACH SVHC :

No SVHC

Number of Pins :

6

Terminal Finish :

Tin (Sn)

hFE Min :

80

Number of Terminations :

6

JESD-609 Code :

e3

Max Power Dissipation :

300mW

Height :

6.35mm

Min Operating Temperature :

-65°C

Power Dissipation :

300mW

Element Configuration :

Dual

Base Part Number :

MD12

Time@Peak Reflow Temperature-Max (s) :

40