PEMD13,115
- Mfr.Part #
- PEMD13,115
- Manufacturer
- Nexperia
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS PREBIAS 1NPN 1PNP SOT666
- Stock
- 7,473
- In Stock :
- 7,473
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Height :
- 600μm
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Min Operating Temperature :
- -65°C
- Transistor Type :
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Package / Case :
- SOT-563, SOT-666
- Number of Channels :
- 2
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Number of Terminations :
- 6
- Max Operating Temperature :
- 150°C
- Base Part Number :
- MD13
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Collector Current :
- 100mA
- Weight :
- 4.535924g
- Termination :
- SMD/SMT
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 5V
- Max Power Dissipation :
- 300mW
- ECCN Code :
- EAR99
- Number of Pins :
- 6
- Max Collector Current :
- 100mA
- Number of Elements :
- 2
- Resistor - Base (R1) :
- 4.7k Ω
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Polarity :
- NPN, PNP
- Current - Collector Cutoff (Max) :
- 1μA
- Width :
- 1.3mm
- Max Breakdown Voltage :
- 50V
- Radiation Hardening :
- No
- Terminal Form :
- Flat
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 4 Weeks
- Element Configuration :
- Dual
- Additional Feature :
- BUILT IN BIAS RESISTOR RATIO IS 10
- Published :
- 2011
- Power Dissipation :
- 300mW
- Collector Emitter Voltage (VCEO) :
- 50V
- Pin Count :
- 6
- Resistor - Emitter Base (R2) :
- 47k Ω
- Collector Emitter Breakdown Voltage :
- 50V
- Length :
- 1.7mm
- hFE Min :
- 100
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 100mV @ 250µA, 5mA
- Mounting Type :
- Surface Mount
- Datasheets
- PEMD13,115

PEMD13,115 datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Nexperia USA Inc. stock available at
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