PEMD9,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Collector Emitter Breakdown (Max) :

50V

Number of Pins :

6

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Factory Lead Time :

4 Weeks

Transistor Application :

SWITCHING

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Resistor - Base (R1) :

10k Ω

Surface Mount :

yes

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max) :

100mA

Resistor - Emitter Base (R2) :

47k Ω

Current - Collector Cutoff (Max) :

1μA

Terminal Finish :

Tin (Sn)

Operating Temperature (Max) :

150°C

Package / Case :

SOT-563, SOT-666

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Polarity :

NPN, PNP

Power Dissipation :

300mW

Number of Elements :

2

Terminal Form :

Flat

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Part Number :

P*MD9

Number of Terminations :

6

JESD-609 Code :

e3

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Mounting Type :

Surface Mount

Published :

2011

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 5mA 5V