PEMD6,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Current - Collector Cutoff (Max) :

1μA

Pin Count :

6

Width :

6.35mm

ECCN Code :

EAR99

Power Dissipation :

300mW

Max Output Current :

100mA

Element Configuration :

Dual

Additional Feature :

BUILT IN BIAS RESISTOR

Max Operating Temperature :

150°C

JESD-609 Code :

e3

Number of Pins :

6

Length :

6.35mm

Lead Free :

Lead Free

hFE Min :

200

Base Part Number :

P*MD6

Resistor - Base (R1) :

4.7k Ω

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Factory Lead Time :

4 Weeks

Max Breakdown Voltage :

50V

Max Power Dissipation :

300mW

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Termination :

SMD/SMT

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1mA 5V

Max Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Height :

6.35mm

Package / Case :

SOT-563, SOT-666

Collector Emitter Breakdown Voltage :

50V

Mount :

Surface Mount

Number of Terminations :

6

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

4.535924g

Collector Emitter Voltage (VCEO) :

50V

Operating Supply Voltage :

50V

Polarity :

NPN, PNP

Published :

2009

Min Operating Temperature :

-65°C

Terminal Form :

Flat