PEMD48,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Collector Current :

100mA

Polarity :

NPN, PNP

Current - Collector Cutoff (Max) :

1μA

Max Breakdown Voltage :

50V

Max Power Dissipation :

300mW

Mount :

Surface Mount

Power Dissipation :

300mW

Collector Emitter Voltage (VCEO) :

50V

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 100mV @ 250μA, 5mA

Min Operating Temperature :

-65°C

Collector Emitter Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Published :

2011

Base Part Number :

P*MD48

Length :

1.7mm

Termination :

SMD/SMT

Number of Pins :

6

Factory Lead Time :

4 Weeks

Package / Case :

SOT-563, SOT-666

Transistor Application :

SWITCHING

Emitter Base Voltage (VEBO) :

10V

Number of Elements :

2

Height :

600μm

Time@Peak Reflow Temperature-Max (s) :

30

Transition Frequency :

230MHz

RoHS Status :

ROHS3 Compliant

Width :

1.3mm

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Weight :

4.535924g

Element Configuration :

Dual

Collector Emitter Saturation Voltage :

150mV

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V / 100 @ 10mA 5V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Emitter Base (R2) :

47k Ω

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

6

ECCN Code :

EAR99

Max Operating Temperature :

150°C

Terminal Form :

Flat

Resistor - Base (R1) :

4.7k Ω, 22k Ω

hFE Min :

80

Pin Count :

6