PEMD4,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Terminal Form :

Flat

Max Collector Current :

100mA

Collector Emitter Breakdown Voltage :

50V

REACH SVHC :

No SVHC

Radiation Hardening :

No

hFE Min :

200

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector Cutoff (Max) :

1μA

Number of Elements :

2

Max Power Dissipation :

300mW

Number of Pins :

6

Mount :

Surface Mount

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Pin Count :

6

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

50V

ECCN Code :

EAR99

Package / Case :

SOT-563, SOT-666

Height :

6.35mm

Number of Terminations :

6

Factory Lead Time :

4 Weeks

Base Part Number :

P*MD4

Mounting Type :

Surface Mount

Termination :

SMD/SMT

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

300mW

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Published :

2009

Terminal Finish :

Tin (Sn)

Width :

6.35mm

Max Operating Temperature :

150°C

Min Operating Temperature :

-65°C

Additional Feature :

BUILT-IN BIAS RESISTOR

Polarity :

NPN, PNP

Element Configuration :

Dual

Weight :

4.535924g

Resistor - Base (R1) :

10k Ω

Length :

6.35mm

RoHS Status :

ROHS3 Compliant