PEMD4,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Published :

2009

Terminal Form :

Flat

Collector Emitter Breakdown Voltage :

50V

Terminal Finish :

Tin (Sn)

Height :

6.35mm

hFE Min :

200

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Power Dissipation :

300mW

Length :

6.35mm

Width :

6.35mm

Number of Pins :

6

Element Configuration :

Dual

REACH SVHC :

No SVHC

Number of Elements :

2

Min Operating Temperature :

-65°C

Factory Lead Time :

4 Weeks

Polarity :

NPN, PNP

Termination :

SMD/SMT

Max Power Dissipation :

300mW

Resistor - Base (R1) :

10k Ω

Package / Case :

SOT-563, SOT-666

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Additional Feature :

BUILT-IN BIAS RESISTOR

Mount :

Surface Mount

Weight :

4.535924g

Number of Terminations :

6

Current - Collector Cutoff (Max) :

1μA

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Collector Emitter Voltage (VCEO) :

50V

Mounting Type :

Surface Mount

Pin Count :

6

Max Collector Current :

100mA

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1mA 5V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Base Part Number :

P*MD4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Max Operating Temperature :

150°C