PEMD3,315

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Current - Collector Cutoff (Max) :

1μA

Lead Free :

Lead Free

JESD-609 Code :

e3

Terminal Form :

Flat

Factory Lead Time :

4 Weeks

Height :

600μm

hFE Min :

30

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Min Operating Temperature :

-65°C

Max Operating Temperature :

150°C

Continuous Collector Current :

100mA

Package / Case :

SOT-563, SOT-666

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Pin Count :

6

Resistor - Base (R1) :

10k Ω

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Number of Elements :

2

Max Output Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Emitter Base (R2) :

10k Ω

Length :

1.7mm

Element Configuration :

Dual

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

50V

Emitter Base Voltage (VEBO) :

10V

Packaging :

Tape and Reel (TR)

Published :

2013

Polarity :

NPN, PNP

Number of Pins :

6

Width :

600μm

Operating Supply Voltage :

50V

Max Collector Current :

100mA

Base Part Number :

P*MD3

Transistor Application :

SWITCHING

Number of Terminations :

6

Max Power Dissipation :

300mW

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Number of Channels :

2

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Collector Base Voltage (VCBO) :

50V