PEMD3,315

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Height :

600μm

Length :

1.7mm

Current - Collector Cutoff (Max) :

1μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Base Part Number :

P*MD3

Number of Terminations :

6

Published :

2013

Terminal Form :

Flat

Number of Channels :

2

JESD-609 Code :

e3

Factory Lead Time :

4 Weeks

Resistor - Emitter Base (R2) :

10k Ω

Collector Emitter Voltage (VCEO) :

50V

Collector Base Voltage (VCBO) :

50V

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

hFE Min :

30

Polarity :

NPN, PNP

Min Operating Temperature :

-65°C

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Number of Pins :

6

Lead Free :

Lead Free

Max Operating Temperature :

150°C

Max Power Dissipation :

300mW

Number of Elements :

2

Emitter Base Voltage (VEBO) :

10V

Terminal Finish :

Tin (Sn)

Continuous Collector Current :

100mA

Element Configuration :

Dual

Max Collector Current :

100mA

Width :

600μm

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Package / Case :

SOT-563, SOT-666

Transistor Application :

SWITCHING

Max Output Current :

100mA

Operating Supply Voltage :

50V

Resistor - Base (R1) :

10k Ω

Pin Count :

6

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Mount :

Surface Mount