PEMD3,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Length :

1.7mm

JESD-609 Code :

e3

Package / Case :

SOT-563, SOT-666

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

ECCN Code :

EAR99

Published :

2005

Mounting Type :

Surface Mount

Power Dissipation :

300mW

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Emitter Base Voltage (VEBO) :

10V

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Collector Emitter Saturation Voltage :

150mV

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

1μA

Element Configuration :

Dual

Height :

600μm

Max Breakdown Voltage :

50V

Termination :

SMD/SMT

REACH SVHC :

No SVHC

Min Operating Temperature :

-65°C

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Base Part Number :

P*MD3

Weight :

4.535924g

Polarity :

NPN, PNP

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Collector Emitter Voltage (VCEO) :

50V

Width :

1.3mm

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

300mW

Resistor - Base (R1) :

10k Ω

Max Operating Temperature :

150°C

Number of Pins :

6

Number of Elements :

2

Pin Count :

6

Radiation Hardening :

No

hFE Min :

30

Factory Lead Time :

4 Weeks

Max Collector Current :

100mA

Transistor Application :

SWITCHING

Resistor - Emitter Base (R2) :

10k Ω