PEMD24,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Application :

SWITCHING

Number of Terminations :

6

Resistor - Base (R1) :

100k Ω

Resistor - Emitter Base (R2) :

100k Ω

Packaging :

Tape and Reel (TR)

Published :

2005

Max Collector Current :

20mA

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Min Operating Temperature :

-65°C

Max Power Dissipation :

300mW

Pin Count :

6

Mounting Type :

Surface Mount

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Flat

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

150mV @ 250µA, 5mA

Collector Emitter Breakdown Voltage :

50V

Number of Pins :

6

Factory Lead Time :

4 Weeks

Polarity :

NPN, PNP

Package / Case :

SOT-563, SOT-666

Max Operating Temperature :

150°C

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Max Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

1μA

Collector Emitter Voltage (VCEO) :

50V

Radiation Hardening :

No

Number of Elements :

2