PEMD20,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Radiation Hardening :

No

Element Configuration :

Dual

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Package / Case :

SOT-563, SOT-666

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 20mA 5V

Resistor - Emitter Base (R2) :

2.2k Ω

Collector Emitter Voltage (VCEO) :

50V

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Number of Elements :

1

Min Operating Temperature :

-65°C

Max Power Dissipation :

300mW

Max Operating Temperature :

150°C

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

1μA

Transistor Application :

SWITCHING

Resistor - Base (R1) :

2.2k Ω

Terminal Finish :

Tin (Sn)

Number of Terminations :

6

Lead Free :

Lead Free

ECCN Code :

EAR99

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Factory Lead Time :

4 Weeks

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Max Collector Current :

100mA

Pin Count :

6

Published :

2005

Polarity :

NPN, PNP