PEMD2,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Min Operating Temperature :

-65°C

Transistor Application :

SWITCHING

Resistor - Emitter Base (R2) :

22k Ω

Polarity :

NPN, PNP

Collector Emitter Voltage (VCEO) :

50V

Element Configuration :

Dual

Resistor - Base (R1) :

22k Ω

Height :

6.35mm

Power Dissipation :

300mW

Max Collector Current :

100mA

Published :

2001

REACH SVHC :

No SVHC

Number of Elements :

2

hFE Min :

60

Mounting Type :

Surface Mount

Length :

12.7mm

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Weight :

4.535924g

Collector Emitter Breakdown Voltage :

50V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Max Operating Temperature :

150°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 5V

Packaging :

Tape and Reel (TR)

Termination :

SMD/SMT

Number of Pins :

6

Pin Count :

6

Base Part Number :

MD2

Mount :

Surface Mount

Radiation Hardening :

No

Number of Terminations :

6

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SOT-563, SOT-666

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

1μA

Width :

6.35mm

Factory Lead Time :

4 Weeks

Max Power Dissipation :

300mW