PDTB143EQAZ

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Number of Terminations :

3

Power - Max :

325mW

Number of Elements :

1

Transition Frequency :

150MHz

Terminal Form :

NO LEAD

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Reference Standard :

AEC-Q101; IEC-60134

Max Collector Current :

500mA

Pin Count :

3

Current - Collector Cutoff (Max) :

500nA

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Transistor Type :

PNP - Pre-Biased

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

100mV @ 2.5mA, 50mA

Case Connection :

COLLECTOR

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Frequency - Transition :

150MHz

Published :

2014

JESD-30 Code :

R-PDSO-N3

Resistor - Base (R1) :

4.7 k Ω

Series :

Automotive, AEC-Q101

Collector Emitter Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 50mA 5V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Polarity/Channel Type :

PNP

Package / Case :

3-XDFN Exposed Pad

Collector Emitter Voltage (VCEO) :

100mV

Factory Lead Time :

4 Weeks

Resistor - Emitter Base (R2) :

4.7 k Ω

Max Power Dissipation :

325mW