PDTB113EUX

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Number of Pins :

3

Transistor Element Material :

SILICON

Max Collector Current :

500mA

Collector Emitter Voltage (VCEO) :

100mV

Power - Max :

300mW

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

500nA

Polarity/Channel Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

100mV @ 2.5mA, 50mA

Mount :

Surface Mount

Resistor - Emitter Base (R2) :

1 k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

50V

Resistor - Base (R1) :

1 k Ω

Frequency - Transition :

140MHz

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Factory Lead Time :

4 Weeks

Transition Frequency :

140MHz

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Max Power Dissipation :

300mW

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Pin Count :

3

Package / Case :

SC-70, SOT-323

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Transistor Type :

NPN - Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

33 @ 50mA 5V

Number of Terminations :

3

Published :

2014