PDTB113EQAZ

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

100mV @ 2.5mA, 50mA

Power - Max :

325mW

Mounting Type :

Surface Mount

Terminal Form :

NO LEAD

Factory Lead Time :

4 Weeks

JESD-30 Code :

R-PDSO-N3

Package / Case :

3-XDFN Exposed Pad

Resistor - Emitter Base (R2) :

1 k Ω

RoHS Status :

ROHS3 Compliant

Resistor - Base (R1) :

1 k Ω

Packaging :

Tape and Reel (TR)

Reference Standard :

AEC-Q101; IEC-60134

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Polarity/Channel Type :

PNP

Frequency - Transition :

150MHz

Collector Emitter Breakdown Voltage :

50V

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

COLLECTOR

Max Power Dissipation :

325mW

Transistor Type :

PNP - Pre-Biased

Max Collector Current :

500mA

Current - Collector Cutoff (Max) :

500nA

Published :

2014

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

33 @ 50mA 5V

Transistor Application :

SWITCHING

Number of Elements :

1

Number of Terminations :

3

Series :

Automotive, AEC-Q101

Collector Emitter Voltage (VCEO) :

100mV

Mount :

Surface Mount

Transition Frequency :

150MHz