PDTB113ZQAZ
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- Mfr.Part #
- PDTB113ZQAZ
- Manufacturer
- Nexperia
- Package / Case
- 3-XDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS PREBIAS PNP 3DFN
- Stock
- 38,422
- In Stock ：
- 38,422
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Pin Count :
- 3
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 150MHz
- Power - Max :
- 325mW
- Reference Standard :
- AEC-Q101; IEC-60134
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Resistor - Base (R1) :
- 1 k Ω
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- NO LEAD
- JESD-30 Code :
- R-PDSO-N3
- Configuration :
- SINGLE WITH BUILT-IN RESISTOR
- Current - Collector Cutoff (Max) :
- 500nA
- Factory Lead Time :
- 4 Weeks
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 100mV @ 2.5mA, 50mA
- Frequency - Transition :
- 150MHz
- Number of Elements :
- 1
- Series :
- Automotive, AEC-Q101
- Published :
- 2014
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP - Pre-Biased
- Number of Terminations :
- 3
- Max Collector Current :
- 500mA
- Additional Feature :
- BUILT IN BIAS RESISTANCE RATIO IS 10
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 50mA 5V
- Package / Case :
- 3-XDFN Exposed Pad
- Max Power Dissipation :
- 325mW
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 100mV
- Resistor - Emitter Base (R2) :
- 10 k Ω
- Packaging :
- Tape and Reel (TR)
- Datasheets
- PDTB113ZQAZ
PDTB113ZQAZ datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Nexperia USA Inc. stock available at
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