PDTB123ET,215

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Polarity :

PNP

Width :

6.35mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 50mA 5V

Resistor - Emitter Base (R2) :

2.2 k Ω

ECCN Code :

EAR99

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

50V

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

Weight :

4.535924g

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Factory Lead Time :

4 Weeks

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

100nA ICBO

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Number of Terminations :

3

Base Part Number :

PDTB123

Max Breakdown Voltage :

50V

JESD-609 Code :

e3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Min Operating Temperature :

-65°C

Max Collector Current :

500mA

Terminal Position :

Dual

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Lead Free :

Lead Free

Transistor Type :

PNP - Pre-Biased

Length :

6.35mm

Max Power Dissipation :

250mW

Resistor - Base (R1) :

2.2 k Ω

Collector Emitter Breakdown Voltage :

50V

Height :

6.35mm

Published :

2005