PDTB114EQAZ

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Type :

PNP - Pre-Biased

Reference Standard :

AEC-Q101; IEC-60134

Collector Emitter Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 50mA 5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Max Power Dissipation :

325mW

Terminal Form :

NO LEAD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

100mV

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

500nA

JESD-30 Code :

R-PDSO-N3

Series :

Automotive, AEC-Q101

Mount :

Surface Mount

Resistor - Base (R1) :

10 k Ω

Packaging :

Tape and Reel (TR)

Transition Frequency :

150MHz

Pin Count :

3

Frequency - Transition :

150MHz

Resistor - Emitter Base (R2) :

10 k Ω

Polarity/Channel Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

100mV @ 2.5mA, 50mA

Number of Elements :

1

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

Power - Max :

325mW

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Terminal Position :

Dual

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Mounting Type :

Surface Mount

Published :

2014

Package / Case :

3-XDFN Exposed Pad

Max Collector Current :

500mA

Factory Lead Time :

4 Weeks