PDTA143EMB
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- Mfr.Part #
- PDTA143EMB
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- NOW NEXPERIA PDTA143EMB - SMALL
- Stock
- 47,721
- In Stock ：
- 47,721
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 500µA, 10mA
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA 5V
- Radiation Hardening :
- No
- Max Operating Temperature :
- 150°C
- Min Operating Temperature :
- -65°C
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 180MHz
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- BUILT IN BIAS RESISTANCE RATIO IS 1
- Frequency - Transition :
- 180MHz
- Max Power Dissipation :
- 250mW
- JESD-609 Code :
- e3
- Max Collector Current :
- 1μA
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- 3-XFDFN
- Collector Emitter Voltage (VCEO) :
- 150mV
- Number of Elements :
- 1
- Pin Count :
- 3
- Published :
- 2012
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- Current - Collector (Ic) (Max) :
- 100mA
- Case Connection :
- COLLECTOR
- Base Part Number :
- PDTA143
- Transistor Application :
- SWITCHING
- Datasheets
- PDTA143EMB
PNP 1 Elements 3 Terminations PNP 3-XFDFN Tape & Reel (TR) Surface Mount
PDTA143EMB,315 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 10mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 150mV @ 500μA, 10mA.Parts of this part have transition frequencies of 180MHz.During maximum operation, collector current can be as low as 1μA volts.
PDTA143EMB,315 Features
the DC current gain for this device is 30 @ 10mA 5V
the vce saturation(Max) is 150mV @ 500μA, 10mA
a transition frequency of 180MHz
PDTA143EMB,315 Applications
There are a lot of Nexperia USA Inc.
PDTA143EMB,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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