PDTA143EMB

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Mfr.Part #
PDTA143EMB
Manufacturer
NXP Semiconductors
Package / Case
3-XFDFN
Datasheet
Download
Description
NOW NEXPERIA PDTA143EMB - SMALL
Stock
47,721
In Stock :
47,721

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
PNP
Packaging :
Tape and Reel (TR)
Pin Count :
3
Mount :
Surface Mount
Additional Feature :
BUILT IN BIAS RESISTANCE RATIO IS 1
Factory Lead Time :
8 Weeks
Case Connection :
COLLECTOR
Frequency - Transition :
180MHz
Terminal Position :
BOTTOM
Current - Collector (Ic) (Max) :
100mA
Base Part Number :
PDTA143
Collector Emitter Breakdown Voltage :
50V
Min Operating Temperature :
-65°C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Transition Frequency :
180MHz
Published :
2012
Mounting Type :
Surface Mount
Vce Saturation (Max) @ Ib, Ic :
150mV @ 500µA, 10mA
Transistor Application :
SWITCHING
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 10mA 5V
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Terminal Finish :
Tin (Sn)
Max Power Dissipation :
250mW
Radiation Hardening :
No
Max Operating Temperature :
150°C
Package / Case :
3-XFDFN
Collector Emitter Voltage (VCEO) :
150mV
Max Collector Current :
1μA
Number of Elements :
1
Number of Pins :
3
Polarity/Channel Type :
PNP
Number of Terminations :
3
Datasheets
PDTA143EMB
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors PDTA143EMB from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:PDTA143, Mounting Type:Surface Mount, Package / Case:3-XFDFN, Number of Pins:3, Number of Terminations:3, PDTA143EMB pinout, PDTA143EMB datasheet PDF, PDTA143EMB amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors PDTA143EMB ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors PDTA143EMB


PNP 1 Elements 3 Terminations PNP 3-XFDFN Tape & Reel (TR) Surface Mount

PDTA143EMB,315 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 10mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 150mV @ 500μA, 10mA.Parts of this part have transition frequencies of 180MHz.During maximum operation, collector current can be as low as 1μA volts.

PDTA143EMB,315 Features


the DC current gain for this device is 30 @ 10mA 5V
the vce saturation(Max) is 150mV @ 500μA, 10mA
a transition frequency of 180MHz


PDTA143EMB,315 Applications


There are a lot of Nexperia USA Inc.
PDTA143EMB,315 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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