PDTA143EMB,315

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Mfr.Part #
PDTA143EMB,315
Manufacturer
Nexperia
Package / Case
3-XFDFN
Datasheet
Download
Description
TRANS PNP 50V 0.1A DFN1006B-3
Stock
1
In Stock :
1

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Max Power Dissipation :
250mW
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
50V
Transistor Type :
PNP
Number of Terminations :
3
Mount :
Surface Mount
Package / Case :
3-XFDFN
Terminal Finish :
Tin (Sn)
Number of Pins :
3
Case Connection :
COLLECTOR
JESD-609 Code :
e3
Max Operating Temperature :
150°C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Part Number :
PDTA143
Radiation Hardening :
No
Packaging :
Tape and Reel (TR)
Factory Lead Time :
8 Weeks
Frequency - Transition :
180MHz
Mounting Type :
Surface Mount
Transistor Application :
SWITCHING
Number of Elements :
1
Min Operating Temperature :
-65°C
Transition Frequency :
180MHz
Collector Emitter Voltage (VCEO) :
150mV
RoHS Status :
ROHS3 Compliant
Additional Feature :
BUILT IN BIAS RESISTANCE RATIO IS 1
Vce Saturation (Max) @ Ib, Ic :
150mV @ 500µA, 10mA
Published :
2012
Current - Collector (Ic) (Max) :
100mA
Max Collector Current :
1μA
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 10mA 5V
Pin Count :
3
Polarity/Channel Type :
PNP
Terminal Position :
BOTTOM
Datasheets
PDTA143EMB,315
Introducing Transistors - Bipolar (BJT) - Single Nexperia PDTA143EMB,315 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:3-XFDFN, Number of Pins:3, Base Part Number:PDTA143, Mounting Type:Surface Mount, PDTA143EMB,315 pinout, PDTA143EMB,315 datasheet PDF, PDTA143EMB,315 amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia PDTA143EMB,315 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PDTA143EMB,315


PNP 1 Elements 3 Terminations PNP 3-XFDFN Tape & Reel (TR) Surface Mount

PDTA143EMB,315 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 10mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 150mV @ 500μA, 10mA.Parts of this part have transition frequencies of 180MHz.During maximum operation, collector current can be as low as 1μA volts.

PDTA143EMB,315 Features


the DC current gain for this device is 30 @ 10mA 5V
the vce saturation(Max) is 150mV @ 500μA, 10mA
a transition frequency of 180MHz


PDTA143EMB,315 Applications


There are a lot of Nexperia USA Inc.
PDTA143EMB,315 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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