PDTA123EMB,315

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Transistor Application :

SWITCHING

Number of Elements :

1

Number of Terminations :

3

Max Collector Current :

100mA

Radiation Hardening :

No

Frequency - Transition :

180MHz

Package / Case :

3-XFDFN

Min Operating Temperature :

-65°C

Element Configuration :

Single

Resistor - Base (R1) :

2.2 k Ω

Terminal Position :

BOTTOM

Max Operating Temperature :

150°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 20mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

50V

Transition Frequency :

180MHz

Terminal Finish :

Tin (Sn)

Polarity/Channel Type :

PNP

Number of Pins :

3

Max Power Dissipation :

250mW

Pin Count :

3

Base Part Number :

PDTA123

Resistor - Emitter Base (R2) :

2.2 k Ω

Packaging :

Tape and Reel (TR)

Factory Lead Time :

8 Weeks

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Case Connection :

COLLECTOR

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

150mV

Mount :

Surface Mount

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Transistor Type :

PNP - Pre-Biased

Current - Collector Cutoff (Max) :

1μA