NVD5890NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

Number of Elements :

1

Published :

2011

Drain to Source Voltage (Vdss) :

40V

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

240 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

14 ns

Power Dissipation-Max :

4W Ta 107W Tc

Power Dissipation :

2.5W

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

400A

Number of Terminations :

2

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

24A

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-609 Code :

e3

Surface Mount :

yes

Turn-Off Delay Time :

39 ns

Rise Time :

52ns

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 50A, 10V

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

4760pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

40V

Current - Continuous Drain (Id) @ 25°C :

24A Ta 123A Tc

Pin Count :

3

Pbfree Code :

yes

Element Configuration :

Single

FET Type :

N-Channel

Factory Lead Time :

26 Weeks

Case Connection :

DRAIN

Lifecycle Status :

LIFETIME (Last Updated: 1 day ago)

Vgs(th) (Max) @ Id :

3.5V @ 250µA

ECCN Code :

EAR99

Continuous Drain Current (ID) :

123A

Fall Time (Typ) :

8.5 ns

RoHS Status :

ROHS3 Compliant