NVD5117PLT4G-VF01

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

11A

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

16m Ω @ 29A, 10V

DS Breakdown Voltage-Min :

60V

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

240 mJ

Factory Lead Time :

7 Weeks

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Power Dissipation-Max :

4.1W Ta 118W Tc

Number of Terminations :

2

Drain-source On Resistance-Max :

0.022Ohm

Drain to Source Voltage (Vdss) :

60V

FET Type :

P-Channel

Reference Standard :

AEC-Q101

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

419A

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 10V

Pbfree Code :

yes

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 25V

Surface Mount :

yes

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

11A Ta 61A Tc

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA