NVD5117PLT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Radiation Hardening :

No

Published :

2009

Rds On (Max) @ Id, Vgs :

16m Ω @ 29A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

11A Ta 61A Tc

JESD-609 Code :

e3

Lifecycle Status :

LIFETIME (Last Updated: 6 days ago)

Number of Pins :

3

Turn On Delay Time :

22 ns

Rise Time :

195ns

Series :

Automotive, AEC-Q101

Power Dissipation :

4.1W

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)

Threshold Voltage :

-1.5V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

11A

Power Dissipation-Max :

4.1W Ta 118W Tc

Fall Time (Typ) :

132 ns

Avalanche Energy Rating (Eas) :

240 mJ

FET Type :

P-Channel

Number of Terminations :

2

REACH SVHC :

No SVHC

Element Configuration :

Single

Pin Count :

3

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.022Ohm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

4.8nF @ 25V

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

DS Breakdown Voltage-Min :

60V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) :

60V

Number of Segments :

80

ECCN Code :

EAR99

Turn-Off Delay Time :

50 ns

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 10V

Case Connection :

DRAIN

Factory Lead Time :

19 Weeks

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Lead Free :

Lead Free

Mounting Type :

Surface Mount