NVD5414NT4G
- Mfr.Part #
- NVD5414NT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 24A DPAK
- Stock
- 18,189
- In Stock :
- 18,189
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSSO-G2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 6.73mm
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- Reach Compliance Code :
- not_compliant
- Power Dissipation-Max :
- 55W Tc
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 58ns
- Turn On Delay Time :
- 12 ns
- Height :
- 2.38mm
- Rds On (Max) @ Id, Vgs :
- 37m Ω @ 24A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Fall Time (Typ) :
- 69 ns
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Pin Count :
- 4
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 25V
- JESD-609 Code :
- e3
- Drain-source On Resistance-Max :
- 0.037Ohm
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Reference Standard :
- AEC-Q101
- Published :
- 2008
- Continuous Drain Current (ID) :
- 24A
- Operating Temperature :
- -55°C~175°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- LIFETIME (Last Updated: 2 days ago)
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Tin (Sn)
- Pulsed Drain Current-Max (IDM) :
- 75A
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Width :
- 6.22mm
- Factory Lead Time :
- 9 Weeks
- DS Breakdown Voltage-Min :
- 60V
- Turn-Off Delay Time :
- 47 ns
- Drain to Source Voltage (Vdss) :
- 60V
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 48nC @ 10V
- Number of Pins :
- 4
- Number of Terminations :
- 2
- Datasheets
- NVD5414NT4G

N-Channel Tape & Reel (TR) 37m Ω @ 24A, 10V ±20V 1200pF @ 25V 48nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
NVD5414NT4G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1200pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 47 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 75A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 12 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
NVD5414NT4G Features
a continuous drain current (ID) of 24A
the turn-off delay time is 47 ns
based on its rated peak drain current 75A.
a 60V drain to source voltage (Vdss)
NVD5414NT4G Applications
There are a lot of ON Semiconductor
NVD5414NT4G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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