NVD5802NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

101A

Length :

6.22mm

Drain Current-Max (Abs) (ID) :

16.4A

DS Breakdown Voltage-Min :

40V

Fall Time (Typ) :

8.5 ns

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

240 mJ

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

5300pF @ 12V

Height :

2.38mm

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Factory Lead Time :

27 Weeks

Drain-source On Resistance-Max :

0.0078Ohm

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

16.4A Ta 101A Tc

Lead Free :

Lead Free

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 50A, 10V

Turn-Off Delay Time :

39 ns

Width :

6.73mm

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Radiation Hardening :

No

Case Connection :

DRAIN

Power Dissipation-Max :

2.5W Ta 93.75W Tc

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Rise Time :

52ns

ECCN Code :

EAR99

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

14 ns

Lifecycle Status :

LIFETIME (Last Updated: 2 days ago)

Drain to Source Voltage (Vdss) :

40V

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Published :

2009

Number of Pins :

3

JESD-609 Code :

e3

Transistor Element Material :

SILICON