NVD5484NLT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

4

Drain Current-Max (Abs) (ID) :

10.7A

Lifecycle Status :

LIFETIME (Last Updated: 2 days ago)

Avalanche Energy Rating (Eas) :

125 mJ

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

10.7A Ta 54A Tc

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

Pulsed Drain Current-Max (IDM) :

305A

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Terminal Form :

Gull wing

Reference Standard :

AEC-Q101

JESD-609 Code :

e3

Radiation Hardening :

No

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1410pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

DS Breakdown Voltage-Min :

60V

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

17m Ω @ 25A, 10V

Drain to Source Voltage (Vdss) :

60V

Pin Count :

4

Factory Lead Time :

9 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Published :

2013

Surface Mount :

yes

Drain-source On Resistance-Max :

0.017Ohm

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

3.9W Ta 100W Tc

Continuous Drain Current (ID) :

54A

Element Configuration :

Single

Number of Terminations :

2

Transistor Element Material :

SILICON