NVD5806NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

40V

Power Dissipation :

40W

RoHS Status :

ROHS3 Compliant

Number of Pins :

4

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

19m Ω @ 15A, 10V

Reference Standard :

AEC-Q101

Published :

2012

ECCN Code :

EAR99

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Radiation Hardening :

No

Case Connection :

DRAIN

Lead Free :

Lead Free

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

39 mJ

Power Dissipation-Max :

40W Tc

Mounting Type :

Surface Mount

Factory Lead Time :

19 Weeks

JESD-609 Code :

e3

Pbfree Code :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pin Count :

4

Continuous Drain Current (ID) :

33A

Pulsed Drain Current-Max (IDM) :

67A

Drain-source On Resistance-Max :

0.019Ohm

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Vgs (Max) :

±20V

Element Configuration :

Single

Surface Mount :

yes