NTMFD4C20NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Power - Max :

1.09W 1.15W

Gate Charge (Qg) (Max) @ Vgs :

9.3nC @ 4.5V

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Lead Free :

Lead Free

Max Power Dissipation :

1.15W

Continuous Drain Current (ID) :

13.7A

Package / Case :

8-PowerTDFN

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

ROHS3 Compliant

Halogen Free :

Halogen Free

Gate to Source Voltage (Vgs) :

20V

Pin Count :

8

JESD-609 Code :

e3

FET Feature :

Standard

Contact Plating :

Tin

Number of Pins :

8

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

970pF @ 15V

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

24 Weeks

Published :

2013

Current - Continuous Drain (Id) @ 25°C :

9.1A 13.7A

Element Configuration :

Dual

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

7.3m Ω @ 10A, 10V

FET Type :

2 N-Channel (Dual)

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

27.4A