NTMFD4902NFT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

Published :

2012

ECCN Code :

EAR99

Number of Pins :

8

Configuration :

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

8-PowerTDFN

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Dual), Schottky

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 10A, 10V

Continuous Drain Current (ID) :

13.3A

Pulsed Drain Current-Max (IDM) :

60A

Pin Count :

10

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 15V

Number of Terminations :

8

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Factory Lead Time :

7 Weeks

Radiation Hardening :

No

Contact Plating :

Tin

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

9.7nC @ 4.5V

Mount :

Surface Mount

Lead Free :

Lead Free

Case Connection :

DRAIN SOURCE

Power - Max :

1.1W 1.16W

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Drain-source On Resistance-Max :

0.01Ohm

Vgs(th) (Max) @ Id :

2.2V @ 250µA

DS Breakdown Voltage-Min :

30V

Terminal Form :

Flat

Current - Continuous Drain (Id) @ 25°C :

10.3A 13.3A

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Max Power Dissipation :

1.16W

Drain Current-Max (Abs) (ID) :

13.5A