NTMFD4901NFT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

115 mJ

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

10.3A 17.9A

Max Power Dissipation :

1.2W

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 15V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.2V @ 250µA

FET Type :

2 N-Channel (Dual), Schottky

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Continuous Drain Current (ID) :

17.9A

Packaging :

Tape and Reel (TR)

Published :

2006

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Drain Current-Max (Abs) (ID) :

13.5A

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN SOURCE

Factory Lead Time :

7 Weeks

Power - Max :

1.1W 1.2W

Gate Charge (Qg) (Max) @ Vgs :

9.7nC @ 4.5V

Package / Case :

8-PowerTDFN

Drain-source On Resistance-Max :

0.0035Ohm

Radiation Hardening :

No

Mount :

Surface Mount

Terminal Form :

Flat

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pin Count :

8

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 10A, 10V

FET Feature :

Logic Level Gate

Terminal Finish :

Tin (Sn)

Number of Terminations :

8

Pulsed Drain Current-Max (IDM) :

100A

DS Breakdown Voltage-Min :

30V

Number of Pins :

8