NTMFD4902NFT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Element Configuration :

Dual

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Max Power Dissipation :

1.16W

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 10A, 10V

Pulsed Drain Current-Max (IDM) :

60A

Number of Terminations :

8

Terminal Form :

Flat

ECCN Code :

EAR99

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Package / Case :

8-PowerTDFN

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Gate Charge (Qg) (Max) @ Vgs :

9.7nC @ 4.5V

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 15V

Surface Mount :

yes

Power - Max :

1.1W 1.16W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Continuous Drain Current (ID) :

13.3A

FET Type :

2 N-Channel (Dual), Schottky

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

10.3A 13.3A

Number of Elements :

2

Published :

2012

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.01Ohm

Drain Current-Max (Abs) (ID) :

13.5A

Factory Lead Time :

17 Weeks

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

30V

Case Connection :

DRAIN SOURCE

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

30V

Pin Count :

8

Contact Plating :

Tin

Transistor Element Material :

SILICON