NTGD4167CT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Height :

1mm

Fall Time (Typ) :

8 ns

Published :

2007

Lead Free :

Lead Free

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Threshold Voltage :

900mV

Pin Count :

6

REACH SVHC :

No SVHC

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

Base Part Number :

NTGD4167C

FET Type :

N and P-Channel

Number of Elements :

2

FET Feature :

Logic Level Gate

Length :

3.1mm

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.6A, 4.5V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Radiation Hardening :

No

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

295pF @ 15V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 4.5V

Max Power Dissipation :

900mW

Turn On Delay Time :

8 ns

Power Dissipation :

1.1W

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Pbfree Code :

yes

Factory Lead Time :

4 Weeks

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

22 ns

ECCN Code :

EAR99

Number of Terminations :

6

Element Configuration :

Dual

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

2.6A

Rise Time :

8ns

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

30V

Resistance :

90mOhm

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

2.6A 1.9A

Gate to Source Voltage (Vgs) :

12V

Width :

1.7mm