NTGD4169FT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

2.6A Ta

Terminal Position :

Dual

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.6A, 4.5V

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±12V

Package / Case :

SOT-23-6

Operating Temperature :

-25°C~150°C TJ

FET Type :

N-Channel

Number of Terminations :

6

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 4.5V

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Schottky Diode (Isolated)

Drain Current-Max (Abs) (ID) :

2.6A

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

COMMERCIAL

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.09Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

295pF @ 15V

Pin Count :

6

Power Dissipation-Max :

900mW Ta

DS Breakdown Voltage-Min :

30V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G6