NTGD4169FT1G

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Mfr.Part #
NTGD4169FT1G
Manufacturer
onsemi
Package / Case
SOT-23-6
Datasheet
Download
Description
MOSFET N-CH 30V 2.6A 6TSOP
Stock
18,454
In Stock :
18,454

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Qualification Status :
COMMERCIAL
Packaging :
Tape and Reel (TR)
Transistor Application :
SWITCHING
Number of Elements :
1
JESD-30 Code :
R-PDSO-G6
Rds On (Max) @ Id, Vgs :
90m Ω @ 2.6A, 4.5V
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
900mW Ta
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain Current-Max (Abs) (ID) :
2.6A
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C :
2.6A Ta
Terminal Position :
Dual
Package / Case :
SOT-23-6
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Mounting Type :
Surface Mount
JESD-609 Code :
e3
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-25°C~150°C TJ
DS Breakdown Voltage-Min :
30V
Drain-source On Resistance-Max :
0.09Ohm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pin Count :
6
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Finish :
MATTE TIN
Vgs (Max) :
±12V
Drain to Source Voltage (Vdss) :
30V
Surface Mount :
yes
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminations :
6
FET Feature :
Schottky Diode (Isolated)
Gate Charge (Qg) (Max) @ Vgs :
5.5nC @ 4.5V
Terminal Form :
Gull wing
Input Capacitance (Ciss) (Max) @ Vds :
295pF @ 15V
FET Type :
N-Channel
Datasheets
NTGD4169FT1G
Introducing Transistors - FETs, MOSFETs - Single onsemi NTGD4169FT1G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-23-6, Mounting Type:Surface Mount, Operating Temperature:-25°C~150°C TJ, Number of Terminations:6, NTGD4169FT1G pinout, NTGD4169FT1G datasheet PDF, NTGD4169FT1G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTGD4169FT1G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTGD4169FT1G


N-Channel Tape & Reel (TR) 90m Ω @ 2.6A, 4.5V ±12V 295pF @ 15V 5.5nC @ 4.5V 30V SOT-23-6

NTGD4169FT1G Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 295pF @ 15V.2.6A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (2.5V 4.5V) reduces this device's overall power consumption.

NTGD4169FT1G Features


a 30V drain to source voltage (Vdss)


NTGD4169FT1G Applications


There are a lot of Rochester Electronics, LLC
NTGD4169FT1G applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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