NTGD3147FT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2.2A Ta

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 4.5V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Operating Temperature :

-25°C~150°C TJ

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

12V

FET Feature :

Schottky Diode (Isolated)

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.145Ohm

ECCN Code :

EAR99

JESD-609 Code :

e3

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

145m Ω @ 2.2A, 4.5V

Lead Free :

Lead Free

Power Dissipation :

1W

Power Dissipation-Max :

1W Ta

Fall Time (Typ) :

6.2 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-Off Delay Time :

14.5 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 10V

Package / Case :

SOT-23-6

Pin Count :

6

Vgs (Max) :

±12V

Number of Elements :

1

Published :

2008

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

2.2A

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

FET Type :

P-Channel

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 5 days ago)

Number of Pins :

6

Rise Time :

6.2ns

Number of Terminations :

6