NTGD3148NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 10V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

70m Ω @ 3.5A, 4.5V

Pbfree Code :

yes

Number of Terminations :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

20V

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Power Dissipation :

1.1W

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

20V

Operating Temperature :

-50°C~150°C TJ

Number of Pins :

6

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

900mW

FET Feature :

Logic Level Gate

Published :

2008

Gate to Source Voltage (Vgs) :

12V

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Rise Time :

11.2ns

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.07Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

1.6 ns

Continuous Drain Current (ID) :

3A

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

3A

FET Type :

2 N-Channel (Dual)

Element Configuration :

Dual

Factory Lead Time :

15 Weeks

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Gate Charge (Qg) (Max) @ Vgs :

3.8nC @ 4.5V

Terminal Finish :

Tin (Sn)

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Base Part Number :

NTGD3148N

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

2

Turn-Off Delay Time :

12.8 ns