NTE2411

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

500 mA

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA, 5V

Collector-Emitter Voltage-Max :

150 V

Voltage - Collector Emitter Breakdown (Max) :

150 V

Collector Current-Max (IC) :

0.5 A

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Temperature :

-55°C ~ 150°C (TJ)

Surface Mount :

yes

Configuration :

Single

Subcategory :

Other Transistors

Power - Max :

225 mW

JESD-30 Code :

R-PDSO-G3

DC Current Gain-Min (hFE) :

50

Package :

Bag

Current - Collector Cutoff (Max) :

50nA (ICBO)

Package Shape :

RECTANGULAR

HTS Code :

8541.21.00.95

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA

Frequency - Transition :

300MHz

Power Dissipation-Max (Abs) :

0.35 W

Supplier Device Package :

SOT-23

Polarity/Channel Type :

PNP

Transistor Application :

AMPLIFIER

Terminal Form :

Gull wing

Reach Compliance Code :

Unknown

Number of Terminals :

3

Series :

-

Number of Elements :

1

Manufacturer :

NTE Electronics

Qualification Status :

Not Qualified

Terminal Position :

Dual

ECCN Code :

EAR99

Product Status :

Active

Transistor Type :

PNP