NTE195A

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Power Dissipation-Max (Abs) :

8 W

Package :

Bag

JESD-30 Code :

O-MBCY-W3

Reach Compliance Code :

Unknown

Collector-Base Voltage :

70(V)

Package / Case :

TO-205AD, TO-39-3 Metal Can

Package Type :

TO-39

Power Gain :

10(MIN)(dB)

Voltage - Collector Emitter Breakdown (Max) :

70V

Qualification Status :

Not Qualified

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 400mA, 2V

Power - Max :

8W

ECCN Code :

EAR99

Configuration :

Single

Type :

NPN

Case Connection :

COLLECTOR

Supplier Device Package :

TO-39

Series :

-

Gain :

10dB

Transistor Application :

AMPLIFIER

Manufacturer :

NTE Electronics

Power Dissipation :

8(W)

Noise Figure (dB Typ @ f) :

-

Surface Mount :

No

Number of Elements :

1

Subcategory :

Other Transistors

Pin Count :

3

Emitter-Base Voltage :

3(V)

Transistor Element Material :

SILICON

Collector Current (DC) :

1.5(A)

Transistor Type :

NPN

Frequency - Transition :

-

Collector Current-Max (IC) :

1.5 A

Number of Terminals :

3

Terminal Form :

Wire

Mounting Type :

Through Hole

Current - Collector (Ic) (Max) :

1.5A

Operating Temp Range :

-65C to 200C

Package Shape :

Round

Terminal Position :

BOTTOM

Product Status :

Active

HTS Code :

8541.29.00.75

JEDEC-95 Code :

TO-39

Polarity/Channel Type :

NPN

Power Dissipation Ambient-Max :

8 W

DC Current Gain-Min (hFE) :

30

Operating Temperature :

-