NTDV5804NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins :

4

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 30A, 10V

Pbfree Code :

yes

Number of Elements :

1

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0075Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

26.8 ns

Drain to Source Voltage (Vdss) :

40V

Factory Lead Time :

15 Weeks

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Number of Terminations :

2

Power Dissipation-Max :

71W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2850pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Surface Mount :

yes

Published :

2011

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 6 days ago)

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

69A

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

11.8 ns

Radiation Hardening :

No

Lead Free :

Lead Free

Fall Time (Typ) :

5.9 ns

Power Dissipation :

71W

Current - Continuous Drain (Id) @ 25°C :

69A Tc

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Pin Count :

4

Rise Time :

18.7ns