NTDV3055L104-1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

104m Ω @ 6A, 5V

Vgs (Max) :

±15V

Continuous Drain Current (ID) :

12A

JESD-30 Code :

R-PSIP-T3

FET Type :

N-Channel

Surface Mount :

No

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Power Dissipation-Max :

1.5W Ta 48W Tj

Drain to Source Voltage (Vdss) :

60V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

60V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Mounting Type :

Through Hole

Pin Count :

4

Number of Terminations :

3

Pbfree Code :

yes

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Published :

2008

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

4

Avalanche Energy Rating (Eas) :

61 mJ

Drive Voltage (Max Rds On,Min Rds On) :

5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2V @ 250μA

Packaging :

Tube

Case Connection :

DRAIN

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant