NTDV18N06LT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 5 days ago)

Avalanche Energy Rating (Eas) :

72 mJ

Pin Count :

3

Vgs (Max) :

±15V

Pulsed Drain Current-Max (IDM) :

54A

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.065Ohm

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) :

60V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

675pF @ 25V

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

5V

JESD-609 Code :

e3

Fall Time (Typ) :

38 ns

Power Dissipation-Max :

2.1W Ta 55W Tj

DS Breakdown Voltage-Min :

60V

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

18A Ta

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

15V

Number of Pins :

3

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Number of Elements :

1

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

2V @ 250μA

Terminal Form :

Gull wing

Published :

2005

Transistor Application :

SWITCHING

Pbfree Code :

yes

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.29.00.95

Turn On Delay Time :

9.9 ns

Rds On (Max) @ Id, Vgs :

65m Ω @ 9A, 5V

Lead Free :

Lead Free

Turn-Off Delay Time :

19 ns

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Surface Mount :

yes

Continuous Drain Current (ID) :

18A

Rise Time :

79ns