NTDV18N06LT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 5 days ago)

Terminal Form :

Gull wing

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2V @ 250μA

Pulsed Drain Current-Max (IDM) :

54A

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Avalanche Energy Rating (Eas) :

72 mJ

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

5V

Pin Count :

3

Vgs (Max) :

±15V

Packaging :

Tape and Reel (TR)

Number of Elements :

1

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Number of Pins :

3

Transistor Application :

SWITCHING

Turn-Off Delay Time :

19 ns

Operating Temperature :

-55°C~175°C TJ

Published :

2005

Drain to Source Voltage (Vdss) :

60V

Power Dissipation-Max :

2.1W Ta 55W Tj

DS Breakdown Voltage-Min :

60V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pbfree Code :

yes

Number of Terminations :

2

JESD-609 Code :

e3

Turn On Delay Time :

9.9 ns

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

FET Type :

N-Channel

Surface Mount :

yes

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Rise Time :

79ns

Fall Time (Typ) :

38 ns

Current - Continuous Drain (Id) @ 25°C :

18A Ta

HTS Code :

8541.29.00.95

Rds On (Max) @ Id, Vgs :

65m Ω @ 9A, 5V

Input Capacitance (Ciss) (Max) @ Vds :

675pF @ 25V

Continuous Drain Current (ID) :

18A

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

0.065Ohm

Gate to Source Voltage (Vgs) :

15V

Radiation Hardening :

No