NTDV20P06LT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

28 ns

ECCN Code :

EAR99

Pin Count :

3

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Resistance :

150mOhm

Drain to Source Breakdown Voltage :

-60V

Current - Continuous Drain (Id) @ 25°C :

15.5A Ta

Mounting Type :

Surface Mount

Factory Lead Time :

4 Weeks

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

60V

Turn On Delay Time :

11 ns

Published :

2005

JESD-609 Code :

e3

Lifecycle Status :

LIFETIME (Last Updated: 2 days ago)

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

50A

FET Type :

P-Channel

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

150m Ω @ 7.5A, 5V

Terminal Form :

Gull wing

Number of Elements :

1

Surface Mount :

yes

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Channels :

1

Fall Time (Typ) :

70 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

90ns

Number of Terminations :

2

Continuous Drain Current (ID) :

15.5A

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 5V

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

65W Tc

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pbfree Code :

yes

Radiation Hardening :

No