NTDV20N06LT4G
- Mfr.Part #
- NTDV20N06LT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 20A DPAK
- Stock
- 8,404
- In Stock :
- 8,404
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 62 ns
- Factory Lead Time :
- 22 Weeks
- Reference Standard :
- AEC-Q101
- Power Dissipation-Max :
- 1.36W Ta 60W Tj
- Drain to Source Voltage (Vdss) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Avalanche Energy Rating (Eas) :
- 128 mJ
- Element Configuration :
- Single
- Turn On Delay Time :
- 9.6 ns
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Number of Elements :
- 1
- Number of Terminations :
- 2
- HTS Code :
- 8541.29.00.95
- Drain-source On Resistance-Max :
- 0.048Ohm
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 15V
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~175°C TJ
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2005
- Turn-Off Delay Time :
- 25 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 990pF @ 25V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Mounting Type :
- Surface Mount
- Rise Time :
- 98ns
- Surface Mount :
- yes
- Rds On (Max) @ Id, Vgs :
- 48m Ω @ 10A, 5V
- Pbfree Code :
- yes
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 20A
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 20A Ta
- FET Type :
- N-Channel
- Terminal Finish :
- Tin (Sn)
- Vgs (Max) :
- ±15V
- DS Breakdown Voltage-Min :
- 60V
- Pulsed Drain Current-Max (IDM) :
- 60A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 5V
- Packaging :
- Tape and Reel (TR)
- Datasheets
- NTDV20N06LT4G

N-Channel Tape & Reel (TR) 48m Ω @ 10A, 5V ±15V 990pF @ 25V 32nC @ 5V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
NTDV20N06LT4G Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 128 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 990pF @ 25V.This device has a continuous drain current (ID) of [20A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 25 ns.A maximum pulsed drain current of 60A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 9.6 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 15V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (5V).
NTDV20N06LT4G Features
the avalanche energy rating (Eas) is 128 mJ
a continuous drain current (ID) of 20A
the turn-off delay time is 25 ns
based on its rated peak drain current 60A.
a 60V drain to source voltage (Vdss)
NTDV20N06LT4G Applications
There are a lot of ON Semiconductor
NTDV20N06LT4G applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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