NTDV20N06T4G
- Mfr.Part #
- NTDV20N06T4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 20A DPAK
- Stock
- 18,128
- In Stock :
- 18,128
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- HTS Code :
- 8541.29.00.95
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Published :
- 2014
- Surface Mount :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Element Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 60A
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Factory Lead Time :
- 2 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 1015pF @ 25V
- Rise Time :
- 60.5ns
- Terminal Finish :
- Tin (Sn)
- Avalanche Energy Rating (Eas) :
- 170 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 20A Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 20A
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 9.5 ns
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- CONSULT SALES OFFICE (Last Updated: 2 days ago)
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 1.88W Ta 60W Tj
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 60V
- Turn-Off Delay Time :
- 27.1 ns
- Radiation Hardening :
- No
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- DS Breakdown Voltage-Min :
- 60V
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.046Ohm
- Fall Time (Typ) :
- 37.1 ns
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 46m Ω @ 10A, 10V
- Number of Terminations :
- 2
- Datasheets
- NTDV20N06T4G

N-Channel Tape & Reel (TR) 46m Ω @ 10A, 10V ±20V 1015pF @ 25V 30nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
NTDV20N06T4G Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 170 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1015pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 20A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 27.1 ns.Peak drain current for this device is 60A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 60V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (10V) reduces this device's overall power consumption.
NTDV20N06T4G Features
the avalanche energy rating (Eas) is 170 mJ
a continuous drain current (ID) of 20A
the turn-off delay time is 27.1 ns
based on its rated peak drain current 60A.
a 60V drain to source voltage (Vdss)
NTDV20N06T4G Applications
There are a lot of ON Semiconductor
NTDV20N06T4G applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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