NTDV20N06LT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Rise Time :

98ns

Number of Pins :

3

FET Type :

N-Channel

DS Breakdown Voltage-Min :

60V

Published :

2005

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Fall Time (Typ) :

62 ns

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

48m Ω @ 10A, 5V

Pin Count :

3

Number of Terminations :

2

Vgs(th) (Max) @ Id :

2V @ 250μA

Power Dissipation-Max :

1.36W Ta 60W Tj

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Vgs (Max) :

±15V

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Radiation Hardening :

No

Continuous Drain Current (ID) :

20A

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Factory Lead Time :

22 Weeks

Pulsed Drain Current-Max (IDM) :

60A

Drive Voltage (Max Rds On,Min Rds On) :

5V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

15V

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.048Ohm

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Avalanche Energy Rating (Eas) :

128 mJ

Input Capacitance (Ciss) (Max) @ Vds :

990pF @ 25V

JESD-609 Code :

e3

ECCN Code :

EAR99

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

60V

Turn On Delay Time :

9.6 ns

Element Configuration :

Single

Case Connection :

DRAIN

Turn-Off Delay Time :

25 ns

Lead Free :

Lead Free

Mounting Type :

Surface Mount

HTS Code :

8541.29.00.95

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reference Standard :

AEC-Q101